Fundamental Study on Electric Field Assisted Biomachining.
نویسندگان
چکیده
منابع مشابه
Scaling theory of electric-field-assisted tunnelling
Recent experiments report the current (I) versus voltage (V) characteristics of a tunnel junction consisting of a metallic tip placed at a distance d from a planar electrode, d varying over six orders of magnitude, from few nanometres to few millimetres. In the 'electric-field-assisted' (or 'field emission') regime, as opposed to the direct tunnelling regime used in conventional scanning tunnel...
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Femtosecond electric-field-assisted pump-probe measurements are a new approach to the study of fundamental processes within organic optoelectronic devices. Here we report a detailed study of organic light-emitting diodes based on poly(9,9-dioctylfluorene), using both temporal and spectral information to investigate polaron generation, due to field-induced singlet dissociation, and their subsequ...
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In this investigation, biodegradable polycaprolactone polymeric particles (300-4500 nm in diameter) were prepared by jetting a solution in an electric field. An extensive study has been carried out to determine how the size and size distribution of the particles generated can be controlled by systematically varying the polymer concentration in solution (and thereby its viscosity and electrical ...
متن کاملElectric-field-assisted assembly of perpendicularly oriented nanorod superlattices.
We observe the assembly of CdS nanorod superlattices by the combination of a DC electric field and solvent evaporation. In each electric-field (1 V/microm) assisted assembly, CdS nanorods (5 nm x 30 nm) suspended initially in toluene were observed to align perpendicular to the substrate. Azimuthal alignment along the nanorod crystal faces and the presence of stacking faults indicate that both 2...
متن کاملElectric field Assisted Nanostucturing of a Mott Insulator
We report the first experimental evidence for a strong electromechanical coupling in the Mott insulator GaTa4Se8 allowing a highly reproducible nano-writing with a Scanning Tunneling Microscope (STM). The local electric field across the STM junction is observed to have a threshold value above which the clean (100) surface of GaTa4Se8 becomes mechanically instable: At voltage biases V > 1.1V the...
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ژورنال
عنوان ژورنال: Journal of the Japan Society for Precision Engineering
سال: 1996
ISSN: 1882-675X,0912-0289
DOI: 10.2493/jjspe.62.540